The TE28F200B5B80 is a 200-Mbit (12,582,912 x 16) or (25,165,824 x 8) Flash memory device manufactured by Intel. It is designed for high-performance, high-density storage applications. This memory device utilizes a 0.18 µm process technology, ensuring fast read and write operations, low power consumption, and high endurance.

Applications

• Embedded systems requiring non-volatile storage
• Networking equipment for configuration storage
• Industrial control systems for program and data memory
• Wireless communication devices
• Consumer electronics such as digital cameras and MP3 players

Features

• 200-Mbit density
• Organized as 12,582,912 x 16 or 25,165,824 x 8
• 0.18 µm process technology
• Fast read access time
• Low power consumption
• High endurance: minimum 100,000 program/erase cycles
• Sector erase capability
• Command set compatible with JEDEC standards
• Operating voltage: 2.7V to 3.6V
• Available in surface mount packages

Benefits

• High storage capacity in a small form factor
• Fast read and write speeds improve system performance
• Low power consumption extends battery life in portable devices
• High endurance ensures long-term reliability
• Sector erase allows for efficient data management
• JEDEC compatibility simplifies system integration

Additional Details

The TE28F200B5B80 incorporates advanced Flash memory technology to provide reliable non-volatile storage. The device features a sector erase architecture, enabling efficient memory management by allowing individual sectors to be erased and reprogrammed without affecting other sectors. This is especially useful in applications that require frequent data updates. The memory also supports a range of operating voltages, providing flexibility in system design. It is commonly available in surface-mount packages, facilitating easy integration into modern electronic devices. The device's command set follows JEDEC standards, ensuring compatibility with a wide range of microcontrollers and embedded processors.