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IRF2907ZS-7PTRRPBF

Part No IRF2907ZS-7PTRRPBF
Manufacturer International Rectifier
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 13+Rohs
Reference case TO263-7P
Manufacturer INTERNATIONAL RECTIFIER
Manufacturer Homepage www.irf.com
Win Source Part Number 731442-IRF2907ZS-7PTRRPBF
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF2907ZS-7PTRRPBF CAD Model

Description

The IRF2907ZS-7PTRRPBF is an Automotive Grade N-Channel MOSFET from International Rectifier, now part of Infineon Technologies. This power MOSFET is designed for high-current, high-performance automotive applications. Its key features include extremely low on-resistance, fast switching speed, and robust design for harsh automotive environments.

Applications:

  • Automotive motor control
  • Automotive DC-DC converters
  • Automotive power distribution
  • Automotive solenoid drivers
  • Heavy Load Switching

Features:

  • N-Channel MOSFET
  • Automotive Grade (AEC-Q101 Qualified)
  • Extremely Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Avalanche Rated
  • 175°C Operating Temperature
  • RoHS Compliant

Benefits:

  • Improved Efficiency: Very low RDS(on) minimizes power losses in high current applications.
  • Reduced Switching Losses: Fast switching characteristics enable higher frequency operation.
  • Enhanced Reliability: Automotive grade qualification ensures robust performance in harsh conditions.
  • Simplified Thermal Management: Low RDS(on) reduces heat generation.
  • Compliance with Automotive Standards: AEC-Q101 qualified for automotive applications.

Additional Details:

The IRF2907ZS-7PTRRPBF has a drain-source voltage (Vds) of 75V, a continuous drain current (Id) of 120A (limited by package), and a pulsed drain current (Idm) of 470A. The typical on-resistance (RDS(on)) is 4.5 mOhms at Vgs = 10V. The gate charge (Qg) is typically 66 nC. The device is designed for automotive applications, meaning it has been qualified to AEC-Q101 standards for reliability and performance in automotive environments. The low RDS(on) makes it ideal for applications where minimizing power loss is critical. The MOSFET is packaged in a D2PAK-7L package to ensure good thermal dissipation.

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