The IRF7523D1PBF is a HEXFET® power MOSFET from International Rectifier (now Infineon Technologies), designed for high-efficiency power conversion in a compact form factor. This device features a low on-state resistance (Rds(on)) and gate charge (Qg), minimizing conduction and switching losses. Its SO-8 package provides excellent thermal performance, making it suitable for space-constrained applications.

Applications:

• Synchronous rectification in DC-DC converters
• Load switching
• Power management in portable devices
• Battery charging circuits
• Power supplies

Features:

• Low on-resistance (Rds(on))
• Low gate charge (Qg)
• SO-8 package for compact size
• Logic-level gate drive
• Pb-free and RoHS compliant
• 100% Rg tested

Benefits:

• Reduces conduction losses for improved efficiency
• Enables faster switching speeds, minimizing switching losses
• Suitable for high-density designs
• Easy to drive with logic-level signals
• Environmentally friendly
• Improved reliability due to gate resistance testing

Technical Specifications:

The IRF7523D1PBF features a drain-source voltage (Vds) of 30V. The on-resistance (Rds(on)) is very low at Vgs=4.5V. The gate charge (Qg) is minimized for fast switching. It is available in an SO-8 package. Datasheet information from Infineon Technologies should be consulted for detailed electrical characteristics, thermal resistance, and package dimensions.