The IRFB23N15D is a power MOSFET from International Rectifier utilizing advanced DirectFET™ packaging technology. This device is optimized for high-frequency switching applications, providing very low on-resistance and gate charge, which leads to reduced power losses and improved efficiency.

Applications:

• Synchronous rectification
• DC-DC converters
• VRM/VRD (Voltage Regulator Module/Voltage Regulator Down)
• Point-of-Load (POL) converters
• High-frequency power supplies

Features:

• DirectFET™ packaging for superior thermal performance
• Ultra Low On-Resistance
• Low Gate Charge (Qg)
• Optimized for high-frequency switching
• Avalanche Rated

Benefits:

• High power density
• Improved efficiency
• Reduced power losses and heat dissipation
• Simplified thermal management
• Increased system reliability

Additional Details:

The IRFB23N15D features a drain-source voltage (Vds) of 150V and a continuous drain current (Id) of approximately 11A. Its low on-resistance minimizes conduction losses, while its low gate charge optimizes switching performance. The DirectFET™ package allows for efficient heat dissipation from both the top and bottom of the device, leading to cooler operation and higher power density. This is useful for designs where space is limited and high performance is required.