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IRFH5007TR2PBF

Part No IRFH5007TR2PBF
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 17A/100A 8PQFN  /  N-Channel 75 V 17A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr International Rectifier
Series HEXFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4290 pF @ 25 V
Mounting SMD (SMT)
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFIRFIRFH5007TR2PBF,2156-IRFH5007TR2PBF-IRTR
Standard Package 400
Win Source Part Number 1065536-IRFH5007TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5007TR2PBF CAD Model

Description

The IRFH5007TR2PBF is a MOSFET (Metal Oxide) N-Channel transistor from International Rectifier's HEXFET® series.

  • Channel Type: N-Channel
  • Series: HEXFET®
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150μA
  • Package: 8-PowerTDFN
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
  • Status: Obsolete

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