The IRFPS35N50L is a power MOSFET from International Rectifier, belonging to their line of power semiconductors designed for high-efficiency power switching applications. This device is an N-channel MOSFET featuring a low on-state resistance (Rds(on)) and a fast switching speed, contributing to reduced power losses and improved performance in various power electronic circuits. Specifically tailored for applications requiring high voltage and current handling capabilities, the IRFPS35N50L offers a robust solution for demanding environments.

Applications:

• Power Factor Correction (PFC)
• Switching Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor Control
• Induction Heating

Features:

• Low On-State Resistance (Rds(on))
• Fast Switching Speed
• High Voltage Capability
• Avalanche Rated
• Isolated Package
• Lead-Free
• RoHS Compliant

Benefits:

• Improved Efficiency: Low Rds(on) minimizes conduction losses, leading to increased energy efficiency.
• High Power Density: High voltage and current ratings enable compact designs with high power handling capabilities.
• Reduced Switching Losses: Fast switching speed minimizes switching losses, further enhancing efficiency.
• Enhanced Reliability: Avalanche rating provides robustness against voltage transients.
• Simplified Thermal Management: Isolated package simplifies heatsinking and reduces thermal management challenges.

Additional Details:

The IRFPS35N50L is typically supplied in an isolated TO-247 package, facilitating easier thermal management and enhanced safety. Its key electrical specifications include a drain-source voltage (Vds) of 500V, gate-source voltage (Vgs), continuous drain current (Id), and pulsed drain current (Idm). The Rds(on) is specified at a defined gate-source voltage and drain current, and the device is designed to operate over a wide temperature range. The isolated package allows for direct mounting to heatsinks without requiring additional insulation.