The IRFR13N20DTRLPBF is a 200V single N-channel HEXFET power MOSFET in a DPAK package. It is designed for applications requiring efficient power switching and management. This device utilizes advanced HEXFET power MOSFET technology to achieve low on-resistance and gate charge, contributing to improved energy efficiency and reduced power losses.

Applications:

• DC-DC converters
• Synchronous rectification
• Motor control circuits
• Load switching
• Power inverters

Features:

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• Fast switching speed
• Avalanche rated
• Lead-free
• RoHS compliant

Benefits:

• Improved energy efficiency
• Reduced power losses and heat generation
• Enhanced system reliability
• Simplified thermal management
• Environmentally friendly
• Suitability for high-frequency applications

Additional Details:

The IRFR13N20DTRLPBF features a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 13A. Its low on-resistance (RDS(on)) of 0.29 Ohms minimizes conduction losses, contributing to higher efficiency. The device's low gate charge (Qg) reduces switching losses, making it suitable for high-frequency applications. The DPAK package allows for efficient heat dissipation. This MOSFET is designed to handle avalanche conditions, providing an extra layer of protection against voltage spikes. The gate threshold voltage typically ranges from 2V to 4V. The IRFR13N20DTRLPBF is lead-free and RoHS compliant, ensuring environmental friendliness. Its fast switching capabilities and robust design make it a suitable choice for various power management applications.