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IS63LV1024-10TLI

Part No IS63LV1024-10TLI
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog Custom Parts (E - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1217248-IS63LV1024-10TLI
Categories Custom Parts
Manufacturer ISSI, Integrated Silicon Solution Inc
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IS63LV1024-10TLI CAD Model

Description

The IS63LV1024-10TLI is a high-speed, low-voltage 1Mbit (128K x 8) static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution Inc.). It is designed for applications requiring fast access times and low power consumption.

Applications:

  • Cache memory in embedded systems
  • Buffer memory in networking equipment
  • High-speed data storage in industrial controllers
  • Digital signal processing (DSP) applications
  • Medical devices

Features:

  • Fast access time: 10ns
  • Low voltage operation: 3.3V
  • Single power supply
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Available in a 32-pin TSOP (Thin Small Outline Package)

Benefits:

  • High-speed performance for demanding applications
  • Reduced power consumption, extending battery life in portable devices
  • Simplified system design due to fully static operation
  • Easy integration with standard logic families
  • Space-saving package for compact designs

Additional Details:

The IS63LV1024-10TLI boasts a very fast access time of 10ns, making it suitable for applications needing quick data retrieval. Its low voltage operation (3.3V) minimizes power consumption, making it a good choice for battery-powered devices. The fully static operation eliminates the need for external clocks or refresh cycles, simplifying the memory controller design and reducing system overhead. The device operates over a temperature range of -40°C to +85°C making it usable in a variety of environments. The TSOP package enables high-density mounting, crucial for applications where board space is limited. The memory is organized as 131,072 words of 8 bits each. Data retention voltage is low, typically around 2V.

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