The IXBH5N160G is a BIMOSFET series power transistor manufactured by IXYS.

• It is: a through-hole type transistor that is packaged in a TO-247-3 package.
• The transistor has: a maximum power rating of 68W and a collector current (Ic) of 5.7A.
• The voltage breakdown between: the collector and emitter is 1600V.
• The gate charge of the transistor is: 26nC, and it has a Vce(on) of 7.2V @ 15V gate voltage and 3A collector current.
• The transistor is designed to operate in: a temperature range of -55°C to 150°C.
• It is suitable for use in: discrete semiconductor products.