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IXFA130N10T

Part No IXFA130N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A TO263 / N-Channel 100 V 130A (Tc) 360W (Tc) Surface Mount TO-263AA (IXFA)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263AA (IXFA)
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA130
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324580-IXFA130N10T
Ultra Librarian 3D Model Ultra Librarian IXFA130N10T CAD Model

Description

The IXFA130N10T is an N-Channel MOSFET transistor that has a drain-source breakdown voltage of 100V and a continuous drain current of 130A at 25°C (Tc).

  • Maximum Rds On at Id, Vgs: 9.1mOhm @ 25A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
  • Power Dissipation (Max): 360W (Tc)
  • Package: TO-263AA (IXFA)
  • Temperature Range: -55°C to 175°C (TJ)
  • ROHS3 Compliant: Yes
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5909 $61.0453
40+ $2.9464 $117.8560
61+ $2.8540 $174.0940
84+ $2.7628 $232.0752
109+ $2.6704 $291.0736
145+ $2.3943 $347.1735
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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