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Same model may have multiple batches, images only for reference.
IXFA130N10T2 Real Image
Same model may have multiple batches, images only for reference.

IXFA130N10T2

Part No IXFA130N10T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchT2 HiperFET Power MOSFET
Datasheet
IXFA130N10T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series GigaMOS, HiPerFET, TrenchT2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 9.1 mOhm @ 65A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXFA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Homepage www.ixys.com
Win Source Part Number 731579-IXFA130N10T2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Family Name IXFA130N10T2
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IXFA130N10T2 CAD Model

Description

The IXFA130N10T2 is an N-channel MOSFET manufactured by IXYS.

  • Series: GigaMOS, HiPerFET, and TrenchT2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 360W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 130A (Tc)
  • Gate-Source Voltage Threshold: 4.5V @ 1mA
  • Gate Charge: 130nC @ 10V
  • Input Capacitance: 6600pF @ 25V
  • Drive Voltage: 10V
  • Supply Status: limited
  • Popularity Rating: medium
  • Alternative Part: SUP90P06-09L-E3

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15+ $7.1026 $106.5390
22+ $6.8807 $151.3754
31+ $6.6587 $206.4197
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52+ $5.7709 $300.0868
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