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IXFA18N60X

Part No IXFA18N60X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO263AA / N-Channel 600 V 18A (Tc) 320W (Tc) Surface Mount TO-263AA (IXFA)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 25 V
FET Feature -
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA18
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355058-IXFA18N60X
Ultra Librarian 3D Model Ultra Librarian IXFA18N60X CAD Model

Description

The IXFA18N60X is a N-Channel MOSFET transistor from IXYS.

  • Series: HiPerFET™ and Ultra X
  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 18A @ 25°C
  • On-Resistance (Rds On): 230mOhm @ 9A and 10V
  • Gate Charge (Qg): 35nC @ 10V
  • Power Dissipation: 320W
  • Mounting Type: Surface Mountable
  • Package: TO-263-3, D²Pak

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4279 $51.4185
32+ $3.2110 $102.7520
49+ $3.1025 $152.0225
70+ $2.8856 $201.9920
91+ $2.7771 $252.7161
113+ $2.6686 $301.5518
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 950 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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