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Same model may have multiple batches, images only for reference.
IXFA7N100P Real Image
Same model may have multiple batches, images only for reference.

IXFA7N100P

Part No IXFA7N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 7A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6V @ 1mA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 2590pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.9 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXFA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205675-IXFA7N100P
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFA7N100P CAD Model

Description

The IXYS IXFA7N100P is a N-channel MOSFET, designed for use in a variety of applications, including power supplies, motor drives, and high voltage circuits. IXYS

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Gate Charge: 47nC @ 10V
  • Package: TO-263
  • Maximum Power Dissipation: 300W @ Tc
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 6V @ 1mA
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tube/Rail
  • Units per Package: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.2415 $55.4490
14+ $7.5828 $106.1592
21+ $7.3459 $154.2639
29+ $7.1089 $206.1581
37+ $6.8719 $254.2603
49+ $6.1610 $301.8890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,340 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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