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Same model may have multiple batches, images only for reference.
IXFB132N50P3 IXYS
Same model may have multiple batches, images only for reference.

IXFB132N50P3

Part No IXFB132N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 132A PLUS264 / N-Channel 500 V 132A (Tc) 1890W (Tc) Through Hole PLUS264™
Datasheet
IXFB132N50P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar3™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 18600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
Base Product Number IXFB132
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355052-IXFB132N50P3
Ultra Librarian 3D Model Ultra Librarian IXFB132N50P3 CAD Model

Description

The IXFB132N50P3 is a N-Channel MOSFET transistor from IXYS.

  • Series: HiPerFET™, Polar3™
  • Vdss (Drain to Source Voltage): 500V
  • Id (Continuous Drain Current) @ 25°C: 132A
  • Rds On (Max) @ Id=66A, Vgs=10V: 39mOhm
  • Qg (Gate Charge) @ Vgs=10V: 250nC
  • Power Dissipation (Max): 1890W
  • Mounting Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $25.2814 $50.5628
5+ $23.6813 $118.4065
7+ $22.8813 $160.1691
10+ $21.2812 $212.8120
13+ $20.4811 $266.2543
16+ $19.6811 $314.8976
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