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IXFH12N90

Name: IXFH12N90
Brand: IXYS
SKU: 608358
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFH12N90
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFETs \| MOSFET N-CH 900V 12A TO-247AD
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	900V
Id - Continuous Drain Current	12A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	900mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs	155nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	4200pF at 25V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
Win Source Part Number	1191046-IXFH12N90
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFH12N90 CAD Model

Alternative Products

Description

The IXFH12N90 is an N-channel MOSFET transistor with a breakdown voltage of 900V and a continuous drain current of 12A.

Maximum Rds On: 900mOhm @ 6A, 10V
Gate-Source Voltage(th) (maximum): 4.5V @ 4mA
Maximum Gate Charge (Qg): 155nC @ 10V
Gate-Source Voltage (maximum): ±20V
Input Capacitance (Ciss) (maximum): 4200pF @ 25V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C to 150°C
Manufacturer Package: TO-247-3
Manufacturer: IXYS

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
7+	$8.3005	$58.1035
15+	$6.8107	$102.1605
23+	$6.5979	$151.7517
32+	$6.3850	$204.3200
41+	$6.1722	$253.0602
55+	$5.5337	$304.3535

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 263 pieces

MOQ: 7 pcs

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