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IXFH14N80

Part No IXFH14N80
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 800V 14A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 700mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4870pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD (IXFH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191049-IXFH14N80
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH14N80 CAD Model

Description

IXYS's IXFH14N80 is a MOSFET technology-based electronic component with N-channel transistor polarity.

  • Packaging: TO-247AD (IXFH)
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 300W
  • Maximum Vds - Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 14A
  • Maximum Rds On: 700mOhm @ 500mA, 10V
  • Maximum Gate Source Voltage: ±20V
  • Input Capacitance: 4870pF @ 25V
  • Category: Discrete semiconductor products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.2950 $58.3600
20+ $5.9852 $119.7040
30+ $5.7981 $173.9430
42+ $5.6110 $235.6620
54+ $5.4239 $292.8906
72+ $4.8637 $350.1864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,800 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
Expected Shipping Date
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