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Same model may have multiple batches, images only for reference.
IXFH36N60P Real Image
Same model may have multiple batches, images only for reference.

IXFH36N60P

Part No IXFH36N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 36A TO-247
Datasheet
IXFH36N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 650W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049425-IXFH36N60P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH36N60P CAD Model

Description

The IXFH36N60P is an N-channel MOSFET manufactured by IXYS.

  • Use: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 36A
  • Case/Package: TO-247AD (IXFH)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 650W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 190 mOhm @ 18A and 10V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Mounting: Through hole
  • Packaging: Tube/rail

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11+ $9.1704 $100.8744
17+ $8.8839 $151.0263
24+ $8.5973 $206.3352
31+ $8.3107 $257.6317
41+ $7.4510 $305.4910
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