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Same model may have multiple batches, images only for reference.
IXFH52N30P Real Image
Same model may have multiple batches, images only for reference.

IXFH52N30P

Part No IXFH52N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 52A TO-247
Datasheet
IXFH52N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049436-IXFH52N30P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH52N30P CAD Model

Description

The IXYS MOSFET is a high-performance electronic component designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 400W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3490pF @ 25V
  • Maximum Rds On: 66 mOhm @ 500mA, 10V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.2700 $61.3500
10+ $10.0677 $100.6770
16+ $9.7531 $156.0496
22+ $9.4385 $207.6470
28+ $9.1239 $255.4692
37+ $8.1800 $302.6600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 170 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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