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SIHD6N80AE-GE3

Part No SIHD6N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD6
Other Names 742-SIHD6N80AE-GE3,742-SIHD6N80AE-GE3CTINACTIVE,742-SIHD6N80AE-GE3DKRINACTIVE,742-SIHD6N80AE-GE3TR
Standard Package 75
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277722-SIHD6N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD6N80AE-GE3 CAD Model

Description

The SIHD6N80AE-GE3 is an N-channel MOSFET transistor with a drain to source voltage rating of 800V and a continuous drain current rating of 5A at 25°C.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 5A @ 25°C
  • Maximum On Resistance: 950mΩ @ 2A
  • Gate Threshold Voltage: 4V @ 250μA
  • Gate Charge: 22.5nC @ 10V
  • Input Capacitance: 422pF @ 100V
  • Supplier: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9605 $62.4325
130+ $0.8986 $116.8180
200+ $0.8676 $173.5200
290+ $0.8057 $233.6530
375+ $0.7747 $290.5125
470+ $0.7437 $349.5390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 171 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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