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Same model may have multiple batches, images only for reference.
IXFH60N50P3 Real Image
Same model may have multiple batches, images only for reference.

IXFH60N50P3

Part No IXFH60N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 60A TO247
Datasheet
IXFH60N50P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 6250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 1040W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049442-IXFH60N50P3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFH60N50P3 CAD Model

Description

The IXYS electronic component with a Win Source Part Number of 1049442-IXFH60N50P3 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 60A @ 25°C.

  • Manufacturer: IXYS
  • Win Source Part Number: 1049442-IXFH60N50P3
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 60A @ 25°C
  • Power Dissipation: 1040W
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Gate Charge: 96nC @ 10V
  • Input Capacitance: 6250pF @ 25V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3

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28+ $5.3925 $150.9900
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50+ $5.0446 $252.2300
67+ $4.5227 $303.0209
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