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SI5904DC-T1

Part No SI5904DC-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 3.1A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.1A
Maximum Rds On at Id,Vgs 75 mOhm @ 3.1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 093758-SI5904DC-T1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5904DC-T1 CAD Model

Description

The SI5904DC-T1 is a dual N-channel logic level gate FET from Vishay. This FET is designed for use in a wide variety of electronic applications, including power supplies, motor control circuits, and other high-performance applications.

  • Package: Reel
  • Category: Discrete Semiconductor Product
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current Rating @ 25°C: 3.1A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Status: Obsolete (EOL)
  • Usage: Commonly used component
  • Popularity Rating: High
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,865 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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