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Same model may have multiple batches, images only for reference.
IXFH66N20Q Real Image
Same model may have multiple batches, images only for reference.

IXFH66N20Q

Part No IXFH66N20Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 66A TO-247
Datasheet
IXFH66N20Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049444-IXFH66N20Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH66N20Q CAD Model

Description

The IXYS MOSFET is a high-performance electronic component that can be used in a variety of applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 66A
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Gate Charge: 105nC @ 10V
  • Maximum Input Capacitance: 3700pF @ 25V
  • Maximum Rds On: 40 mOhm @ 33A, 10V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3

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