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Same model may have multiple batches, images only for reference.
IXFH70N20Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFH70N20Q3

Part No IXFH70N20Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 70A TO247AD / N-Channel 200 V 70A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH)
Datasheet
IXFH70N20Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V
Power Dissipation (Max) 690W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1066179-IXFH70N20Q3
Ultra Librarian 3D Model Ultra Librarian IXFH70N20Q3 CAD Model

Description

The IXYS electronic component is a high-performance MOSFET transistor that is designed to provide reliable performance.

  • Maximum Drain to Source Voltage: 200V
  • Continuous Drain Current: 70A
  • Package: TO-247-3 package
  • Gate Charge: 67 nC @ 10V

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3+ $20.7854 $62.3562
6+ $17.0547 $102.3282
10+ $16.5218 $165.2180
13+ $15.9888 $207.8544
17+ $15.4558 $262.7486
22+ $13.8570 $304.8540
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