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IXFH74N20P Real Image
Same model may have multiple batches, images only for reference.

IXFH74N20P

Part No IXFH74N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 74A TO-247
Datasheet
IXFH74N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049450-IXFH74N20P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH74N20P CAD Model

Description

The IXYS IXFH74N20P is a N-Channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 480W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 74A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 107nC @ 10V
  • Maximum Input Capacitance: 3300pF @ 25V
  • Maximum Rds On: 34 mOhm @ 37A, 10V
  • Package: TO-247AD (IXFH)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient

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