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Same model may have multiple batches, images only for reference.
IXFH88N30P Real Image
Same model may have multiple batches, images only for reference.

IXFH88N30P

Part No IXFH88N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 88A TO-247
Datasheet
IXFH88N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 6300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049460-IXFH88N30P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH88N30P CAD Model

Description

The IXYS IXFH88N30P is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 300V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 44A, 10V
  • Power Dissipation (max): 600W (Tc)
  • Continuous Drain Current @ 25°C: 88A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 6300pF @ 25V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting: Through-Hole
  • Case/Package: TO-247AD (IXFH)
  • Popularity: Medium

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