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IXFK300N20X3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXFK300N20X3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 300A TO264 / N-Channel 200 V 300A (Tc) 1250W (Tc) Through Hole TO-264
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Ultra X3
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	375 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23800 pF @ 25 V
Power Dissipation (Max)	1250W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXFK300
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	1028920-IXFK300N20X3
Ultra Librarian 3D Model	Ultra Librarian IXFK300N20X3 CAD Model

Alternative Products

Description

The IXFK300N20X3 manufactured by IXYS is an N-channel MOSFET transistor that comes in a TO-264-3 package.

Maximum Power Dissipation: 1250W (Tc)
Popularity: Medium
Supply and Demand: Balance
Temperature Range: -55°C to 150°C (TJ)
Drain to Source Voltage: 200V

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IXFK300N20X3

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