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Same model may have multiple batches, images only for reference.
IXFK44N60 Real Image
Same model may have multiple batches, images only for reference.

IXFK44N60

Part No IXFK44N60
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 44A TO-264AA
Datasheet
IXFK44N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 8mA
Max Gate Charge 330nC @ 10V
Max Input Capacitance 8900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 560W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264AA (IXFK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 205686-IXFK44N60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK44N60 CAD Model

Description

The IXFK44N60 is a N-channel MOSFET manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 44A @ 25°C
  • Maximum Power Dissipation: 560W (Tc)
  • Maximum Rds On @ Id,Vgs: 130 mOhm @ 22A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 8mA
  • Max Gate Charge: 330nC @ 10V
  • Package: TO-264AA (IXFK)
  • Mounting: Through Hole
  • Popularity: Popular
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0000 $52.0000
10+ $10.6667 $106.6670
15+ $10.3334 $155.0010
20+ $10.0000 $200.0000
26+ $9.6667 $251.3342
35+ $8.6667 $303.3345
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Availability: 1,000 pieces
MOQ: 4 pcs
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