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IXFN21N100Q

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Part No	IXFN21N100Q
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 21A SOT-227B / N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B
Datasheet	IXFN21N100Q Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5900 pF @ 25 V
Power Dissipation (Max)	520W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN21
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	10
Win Source Part Number	1323879-IXFN21N100Q
Ultra Librarian 3D Model	Ultra Librarian IXFN21N100Q CAD Model

Alternative Products

Description

The IXYS IXFN21N100Q is a N-channel MOSFET designed for use in discrete semiconductor products.

Manufacturer: IXYS
Drain to Source Voltage: 1000V
Continuous Drain Current @ 25°C: 21A (Tc)
Maximum Rds On: 500mOhm @ 500mA, 10V
Gate-Source Threshold Voltage: 5V @ 4mA
Package: SOT-227B
Temperature Range: -55°C to 150°C (TJ)
Popularity Rating: Medium
Supplied in: Tube

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