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IXFN320N17T2

Part No IXFN320N17T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 170V 260A SOT227B / N-Channel 170 V 260A (Tc) 1070W (Tc) Chassis Mount SOT-227B
Datasheet
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 170 V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 640 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 45000 pF @ 25 V
Power Dissipation (Max) 1070W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN320
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324121-IXFN320N17T2
Ultra Librarian 3D Model Ultra Librarian IXFN320N17T2 CAD Model

Description

IXYS' IXFN320N17T2 is a high-power N-channel MOSFET.

  • Manufacturer: IXYS
  • Drain to Source Voltage: 170V
  • Continuous Drain Current: 260A @ 25°C
  • On-Resistance: 5.2mOhm @ 60A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 640nC @ 10V
  • Input Capacitance: 45000pF @ 25V
  • Switching Speed: fast

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