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IXFN360N15T2

Name: IXFN360N15T2
Brand: IXYS
SKU: 1324572
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFN360N15T2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 150V 310A SOT227B / N-Channel 150 V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B
Datasheet	IXFN360N15T2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	715 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	47500 pF @ 25 V
Power Dissipation (Max)	1070W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN360
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	10
Win Source Part Number	1324572-IXFN360N15T2
Ultra Librarian 3D Model	Ultra Librarian IXFN360N15T2 CAD Model

Alternative Products

Description

The IXYS IXFN360N15T2 is a N-channel MOSFET transistor with a drain to source voltage (Vdss) of 150 V.

Continuous Drain Current (Id): 310A (Tc) @ 25°C
Maximum On-Resistance (Rds On): 4mOhm @ 60A and 10V gate-source voltage (Vgs)
Gate Threshold Voltage (Vgs(th)): 5V @ 8mA
Package: SOT-227B
Power Dissipation: 1070W (Tc)
Gate Charge (Qg): 715 nC @ 10V
Input Capacitance (Ciss): 47500 pF @ 25 Vds
Operating Temperature: -55°C to 175°C (TJ)
ROHS3: Compliant
New Designs: Not for new designs

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$89.4117	$89.4117
2+	$86.6176	$173.2352
3+	$83.8235	$251.4705
4+	$81.0294	$324.1176
5+	$72.6470	$363.2350

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