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Same model may have multiple batches, images only for reference.
IXFN80N50Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFN80N50Q3

Part No IXFN80N50Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 63A SOT227B / N-Channel 500 V 63A (Tc) 780W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN80N50Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V
Power Dissipation (Max) 780W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -IXFN80N50Q3
Standard Package 10
Win Source Part Number 1324617-IXFN80N50Q3
Ultra Librarian 3D Model Ultra Librarian IXFN80N50Q3 CAD Model

Description

The IXFN80N50Q3 is a N-channel MOSFET transistor from IXYS. It has a drain to source voltage of 500 V and a continuous drain current of 63A at 25°C.

  • On-resistance: 65mOhm @ 40A and 10V
  • Gate charge: 200 nC @ 10V
  • Input capacitance: 10000 pF @ 25V
  • Package: SOT-227B package
  • Operating Temperature Range: -55°C to 150°C
  • ROHS3 compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $96.5257 $96.5257
2+ $79.2007 $158.4014
3+ $76.7255 $230.1765
4+ $74.2503 $297.0012
5+ $71.7752 $358.8760
6+ $64.3508 $386.1048
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