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IXFN80N60P3

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Part No	IXFN80N60P3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 66A SOT-227B / N-Channel 600 V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13100 pF @ 25 V
Power Dissipation (Max)	960W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN80
RoHS Status	ROHS3 Compliant
MSL Level	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Part Number	-IXFN80N60P3
Standard Package	10
Win Source Part Number	1324104-IXFN80N60P3
Ultra Librarian 3D Model	Ultra Librarian IXFN80N60P3 CAD Model

Alternative Products

Description

The IXYS IXFN80N60P3 is a discrete semiconductor product that is commonly used in transistors, FETs, and MOSFETs.

FET type: N-channel MOSFET
Drain-to-source voltage (Vdss): 600V
Continuous drain current (Id): 66A @ 25°C (Tc)
Maximum Rds On: 70mOhm @ 40A and 10V
Maximum Vgs(th): 5V @ 8mA
Power dissipation: 960W (Tc)
Gate charge (Qg): 190nC @ 10V
Input capacitance (Ciss): 13100pF @ 25V
Maximum Vgs: ±30V
Operating temperature range: -55°C to 150°C (TJ)
Package: SOT-227B package

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IXFN80N60P3

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