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Same model may have multiple batches, images only for reference.
IXFP110N15T2 Real Image
Same model may have multiple batches, images only for reference.

IXFP110N15T2

Part No IXFP110N15T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 110A TO-220
Datasheet
IXFP110N15T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 8600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049500-IXFP110N15T2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP110N15T2 CAD Model

Description

The IXFP110N15T2 is a N-channel MOSFET manufactured by IXYS.

  • Manufacturer: IXYS
  • Channel Type: N-channel
  • Power Dissipation: 480W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 110A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 8600pF @ 25V
  • Rds On: 13 mOhm @ 55A, 10V
  • Package: TO-220AB
  • Category: Discrete Semiconductor Products

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40+ $2.5036 $100.1440
62+ $2.4254 $150.3748
86+ $2.3472 $201.8592
111+ $2.2689 $251.8479
148+ $2.0342 $301.0616
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