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IXFP130N10T

Part No IXFP130N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 104nC @ 10V
Max Input Capacitance 5080pF @ 25V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049501-IXFP130N10T
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP130N10T CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET that is designed for use in various applications.

  • Maximum Power Dissipation: 360W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 130A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Maximum Gate Charge: 104nC @ 10V
  • Package: TO-220AB
  • Dimension: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4500 $51.7500
275+ $0.3693 $101.5575
420+ $0.3577 $150.2340
580+ $0.3462 $200.7960
750+ $0.3347 $251.0250
1,000+ $0.3000 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,040 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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