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IXFP22N65X2

Part No IXFP22N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22A TO220
Datasheet
Sample
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X2
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP22
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 853033-IXFP22N65X2
Ultra Librarian 3D Model Ultra Librarian IXFP22N65X2 CAD Model

Description

The 853033-IXFP22N65X2 is a single N-Channel MOSFET transistor from the HiPerFET™ and Ultra X2 series from IXYS.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 22A @ 25°C
  • On-Resistance (Rds On): 160mOhm @ 11A and 10V Vgs
  • Gate Threshold Voltage (Vgs(th)): 5.5V @ 1.5mA Id
  • Maximum Power Dissipation: 390W
  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Gate Charge (Qg): 38nC @ 10V Vgs
  • Input Capacitance (Ciss): 2310pF @ 25V Vds
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5759 $51.5180
48+ $2.1136 $101.4528
74+ $2.0476 $151.5224
101+ $1.9815 $200.1315
131+ $1.9155 $250.9305
175+ $1.7173 $300.5275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,200 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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