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Same model may have multiple batches, images only for reference.
IXFP3N120 Real Image
Same model may have multiple batches, images only for reference.

IXFP3N120

Part No IXFP3N120
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 3A TO220AB  /  N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1217480-IXFP3N120
Ultra Librarian 3D Model Ultra Librarian IXFP3N120 CAD Model

Description

The IXFP3N120 is a HiPerFET™ N-Channel MOSFET transistor with a drain to source voltage of 1200V and a continuous drain current of 3A (Tc).

  • Drain to Source Voltage: 1200V
  • Continuous Drain Current: 3A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • REACH Status: unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.4240 $50.5440
15+ $6.9120 $103.6800
23+ $6.6960 $154.0080
31+ $6.4800 $200.8800
40+ $6.2640 $250.5600
54+ $5.6160 $303.2640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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