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IXFP4N100Q

Name: IXFP4N100Q
Brand: IXYS
SKU: 1083569
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFP4N100Q
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 4A TO220AB / N-Channel 1000 V 4A (Tc) 150W (Tc) Through Hole TO-220-3
Datasheet	IXFP4N100Q Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Q Class
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
Power Dissipation (Max)	150W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	IXFP4N100
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1083569-IXFP4N100Q
Ultra Librarian 3D Model	Ultra Librarian IXFP4N100Q CAD Model

Alternative Products

Description

The IXFP4N100Q is a N-Channel HiPerFET™ Q Class MOSFET manufactured by IXYS.

Voltage Rating: 1000 V
Current Rating: 4 A
Power Dissipation: 150 W
Package: Through-hole TO-220-3
Operating Temperature Range: -55°C to 150°C
Packaging: Tube, 50 units per package
Supply and Demand: Balanced
REACH: Unaffected
ECCN: EAR99

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