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Same model may have multiple batches, images only for reference.
IXFP8N85XM Real Image
Same model may have multiple batches, images only for reference.

IXFP8N85XM

Part No IXFP8N85XM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 850V 8A TO220 / N-Channel 850 V 8A (Tc) 33W (Tc) Through Hole TO-220 Isolated Tab
Datasheet
IXFP8N85XM Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 654 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IXFP8N85
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066181-IXFP8N85XM
Ultra Librarian 3D Model Ultra Librarian IXFP8N85XM CAD Model

Description

The IXYS HiPerFET MOSFET is a high-performance transistor designed for use in discrete semiconductor products.

  • Current Rating: 8A (Tc)
  • Maximum Drain Source Voltage: 850V
  • Mounting Style: Through-Hole
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Technology: N-channel
  • Gate Charge (Qg): 17 nC @ 10V
  • Input Capacitance (Ciss): 654 pF @ 25V
  • Power Dissipation: 33W (Tc)
  • Rds On: 850mOhm @ 4A, 10V
  • Maximum Vgs: ±30V
  • Product Status: Active
  • Alternative Parts: No alternative parts.

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