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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 654 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IXFP8N85
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066181-IXFP8N85XM
Ultra Librarian 3D Model Ultra Librarian IXFP8N85XM CAD Model

Description

The IXYS HiPerFET MOSFET is a high-performance transistor designed for use in discrete semiconductor products.

  • Current Rating: 8A (Tc)
  • Maximum Drain Source Voltage: 850V
  • Mounting Style: Through-Hole
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Technology: N-channel
  • Gate Charge (Qg): 17 nC @ 10V
  • Input Capacitance (Ciss): 654 pF @ 25V
  • Power Dissipation: 33W (Tc)
  • Rds On: 850mOhm @ 4A, 10V
  • Maximum Vgs: ±30V
  • Product Status: Active
  • Alternative Parts: No alternative parts.

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