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IXFR24N100 Real Image1 IXFR24N100 Real Image2
Same model may have multiple batches, images only for reference.
IXFR24N100 Real Image1 IXFR24N100 Real Image2
IXFR24N100 Real Image1 IXFR24N100 Real Image2
Same model may have multiple batches, images only for reference.

IXFR24N100

Part No IXFR24N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 22A ISOPLUS247 / N-Channel 1000 V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™
Datasheet
IXFR24N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 267 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 416W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXFR24
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Standard Package 30 pcs
Win Source Part Number 1382386-IXFR24N100
Ultra Librarian 3D Model Ultra Librarian IXFR24N100 CAD Model

Description

The IXFR24N100 is a high-performance N-channel MOSFET with a drain-to-source voltage of 1000V and a continuous drain current of 22A @ 25°C.

  • On-Resistance: 390mOhm @ 12A and 10V gate-to-source voltage
  • Gate Threshold Voltage: 5.5V @ 8mA
  • Power Dissipation: 416W @ a case temperature of 25°C
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Manufacturer: IXYS
  • Series: HiPerFET™ series
  • Gate Charge: 267nC @ 10V gate-to-source voltage
  • Input Capacitance: 8700pF @ 25V drain-to-source voltage
  • Maximum Gate-to-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C
  • HTSUS Code: 8541.29.0095

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