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IXFR24N50Q

Name: IXFR24N50Q
Brand: IXYS
SKU: 991318
Availability: InStock
Rating: 4.85 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXFR24N50Q
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 22A ISOPLUS247 / N-Channel 500 V 22A (Tc) 250W (Tc) Through Hole ISOPLUS247™
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	230mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 25 V
Power Dissipation (Max)	250W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	TO-247-3
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	991318-IXFR24N50Q
Ultra Librarian 3D Model	Ultra Librarian IXFR24N50Q CAD Model

Alternative Products

Description

The IXYS HiPerFET™ IXFR24N50Q is a N-Channel MOSFET transistor with a drain-source voltage rating of 500 V and a continuous drain current rating of 22 A.

Maximum On-Resistance: 230 mOhm @ gate-source voltage of 10 V and drain current of 12 A
Package: TO-247-3 with ISOPLUS247™ supplier device package
Power Dissipation Rating: 250 W
Category: Discrete Semiconductor Products
Status: Obsolete
Package: Tube
Units per Package: 30

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