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Same model may have multiple batches, images only for reference.
IXFR48N50Q Real Image
Same model may have multiple batches, images only for reference.

IXFR48N50Q

Part No IXFR48N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs ISOPLUS247 Q-Class
Datasheet
IXFR48N50Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 190nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7000pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 310W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 24A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package ISOPLUS247
Package ISOPLUS247
Win Source Part Number 1191133-IXFR48N50Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFR48N50Q
Introduction Date October 08, 2000
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFR48N50Q CAD Model

Description

The IXYS HiPerFET IXFR48N50Q electronic component is a MOSFET technology-based semiconductor product that belongs to the discrete semiconductor products category.

  • Current-Continuous Drain (Id): 40A (Tc)
  • Drain-Source Voltage: 500V
  • Gate Charge (Qg): 190nC @ 10V
  • Power Dissipation (maximum): 310W (Tc)

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