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Same model may have multiple batches, images only for reference.
IXFT24N50Q Real Image
Same model may have multiple batches, images only for reference.

IXFT24N50Q

Part No IXFT24N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 230 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 1191137-IXFT24N50Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFT24N50Q
Introduction Date March 11, 2003
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFT24N50Q CAD Model

Description

The IXFT24N50Q MOSFET is a current continuous drain (Id) @ 25°C of 24A (Tc) SMD mounting technology by IXYS HiPerFET.

  • Packaging: Tube
  • Maximum Power Dissipation: 300W (Tc)
  • Drain Source Voltage: 500V
  • Gate Source Threshold Voltage: 4.5V @ 4mA
  • Gate Charge (Qg) (maximum) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 3900pF @ 25V
  • Rds On (maximum) @ Id, Vgs: 230 mOhm @ 12A, 10V
  • Channel Type: N
  • Technology: MOSFET
  • Type: OEM part
  • Alternative Part: Available for cross-reference

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