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Same model may have multiple batches, images only for reference.
IXFV12N90P Real Image
Same model may have multiple batches, images only for reference.

IXFV12N90P

Part No IXFV12N90P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 12A PLUS220 / Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) PLUS 220
Datasheet
IXFV12N90P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarP2
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3080pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 380W (Tc)
Rds On (Maximum) @ Id, Vgs 900 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS220
Package TO-220-3, Short Tab
Win Source Part Number 777625-IXFV12N90P
Popularity Medium
Supply and Demand Status Limited
Family Name IXFV12N90P
Introduction Date November 09, 2015
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXFV12N90P CAD Model

Description

The IXYS HiPerFET, PolarP2 series MOSFET is a through hole component, manufactured by IXYS.

  • Package: TO-220-3, Short Tab
  • Drain-Source Voltage: 900V
  • Continuous Drain Current @ Tc, 25°C: 12A
  • Gate Charge @ 10V: 56nC
  • Input Capacitance @ 25V: 3080pF
  • Power Dissipation @ Tc: 380W
  • Rds On @ 6A, 10V: 900 mOhm
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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