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IXFX120N30P3

Part No IXFX120N30P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 120A PLUS247-3 / N-Channel 300 V 120A (Tc) 1130W (Tc) Through Hole PLUS247™-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8630 pF @ 25 V
Power Dissipation (Max) 1130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXFX120
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1340773-IXFX120N30P3
Ultra Librarian 3D Model Ultra Librarian IXFX120N30P3 CAD Model

Description

The IXFX120N30P3 is an N-channel MOSFET transistor from IXYS.

  • Series: HiPerFET™, Polar3™
  • FET Type: MOSFET N-Channel, Metal Oxide
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 120 A (Tc)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Packaging: Tube
  • Standard Package: 30
  • Power - Max: 1130 W (Tc)
  • Vgs(th) (Max) @ Id: 5 V @ 4mA
  • ECCN: EAR99
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.6568 $87.3136
3+ $35.8209 $107.4627
5+ $34.7015 $173.5075
6+ $33.5821 $201.4926
8+ $32.4627 $259.7016
11+ $29.1045 $320.1495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,510 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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