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Same model may have multiple batches, images only for reference.
IXFX44N60 IXYS
Same model may have multiple batches, images only for reference.

IXFX44N60

Part No IXFX44N60
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 330nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8900pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 560W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 22A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 1191154-IXFX44N60
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFX44N60
Introduction Date October 09, 2000
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFX44N60 CAD Model

Description

The 1191154-IXFX44N60 from IXYS is an N-Channel MOSFET transistor with a drain-source voltage of 600V and a continuous drain current of 44A.

  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 44A
  • On-State Resistance: 130mOhm (Maximum) @ 22A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4.5V @ 8mA
  • Gate Charge: 330nC @ 10V
  • Package: TO-247-3
  • Power Dissipation: Up to 560W
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.3035 $63.9105
6+ $17.4798 $104.8788
9+ $16.9335 $152.4015
13+ $16.3873 $213.0349
16+ $15.8410 $253.4560
22+ $14.2023 $312.4506
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Availability: 2,200 pieces
MOQ: 3 pcs
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