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Same model may have multiple batches, images only for reference.
BCW 66F E6327 Real Image
Same model may have multiple batches, images only for reference.

BCW 66F E6327

Part No BCW 66F E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.8A SOT-23
Datasheet
BCW 66F E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 450mV @ 50mA, 500mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 170MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022778-BCW 66F E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCW 66F E6327 CAD Model

Description

The Infineon Technologies 1022778-BCW 66F E6327 is an NPN transistor designed for use in discrete semiconductor products.

  • Mounting: surface-mount technology
  • Package: reel
  • Maximum Current Collector: 800mA
  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Maximum Vce (sat): 450mV @ 50mA, 500mA
  • Collector Cut-Off Current: 20nA (ICBO)
  • Typical Gain (hFE) (Min): 100 @ 100mA, 1V
  • Maximum Power Dissipation: 330mW
  • Operating Temperature Range: 150°C (TJ)
  • Supply and Demand Status: balanced

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