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IXFX73N30Q

Part No IXFX73N30Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 73A PLUS247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 5400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 1049545-IXFX73N30Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX73N30Q CAD Model

Description

The IXFX73N30Q is an N-channel MOSFET from IXYS.

  • Maximum Power Dissipation: 500W
  • Continuous Drain Current: 73A (Tc)
  • Mounting: through-hole
  • Case/Package: PLUS247-3
  • Drain-Source Breakdown Voltage: 300V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 500mA, 10V
  • Popularity: medium
  • Supply and Demand Status: balanced

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