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IXFX90N20Q Real Image1 IXFX90N20Q Real Image2
IXFX90N20Q Real Image1 IXFX90N20Q Real Image2
Same model may have multiple batches, images only for reference.

IXFX90N20Q

Part No IXFX90N20Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 90A PLUS247
Datasheet
IXFX90N20Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 1049546-IXFX90N20Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX90N20Q CAD Model

Description

The IXFX90N20Q MOSFET from IXYS is a high power N-channel transistor designed for use in demanding applications.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 500W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 90A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Gate Charge: 190nC @ 10V
  • Case: PLUS247-3
  • Maximum Rds On @ Id, Vgs: 22 mOhm @ 45A, 10V
  • Market Status: popular
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $46.8001 $93.6002
3+ $38.4001 $115.2003
5+ $37.2000 $186.0000
7+ $36.0000 $252.0000
9+ $34.8001 $313.2009
11+ $31.2001 $343.2011
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