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IXFX94N50P2

Part No IXFX94N50P2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarP2 HiPerFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13700pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1300W (Tc)
Rds On (Maximum) @ Id, Vgs 55 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 1191159-IXFX94N50P2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFX94N50P2
Introduction Date November 30, 2009
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFX94N50P2 CAD Model

Description

The IXYS HiPerFET, PolarHV series MOSFET is a through-hole, N-channel type transistor with a drain-source voltage of 500V.

  • Drain-Source Voltage: 500V
  • Current-Continuous Drain: 94A (Tc) @ 25°C
  • Power Dissipation: 1300W (Tc) maximum
  • Packaging: Tube
  • Package: TO-247-3
  • Technology: MOSFET
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 13700pF @ 25V
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2024
  • ECCN: EAR99
  • Country of Origin: Republic of Korea

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.6819 $59.0457
7+ $16.1492 $113.0444
10+ $15.6446 $156.4460
14+ $15.1399 $211.9586
18+ $14.6352 $263.4336
23+ $13.1213 $301.7899
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Availability: 1,740 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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