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Same model may have multiple batches, images only for reference.
IXGH12N60CD1 Real Image
Same model may have multiple batches, images only for reference.

IXGH12N60CD1

Part No IXGH12N60CD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 24A 100W TO247AD
Datasheet
IXGH12N60CD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 24A
Pulsed Collector Current 48A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 12A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 90μJ (off)
Input Type Standard
Gate Charge 32nC
Turn-on and Turn-off delay time 20ns/60ns
Testing Conditions 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr) 35ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049559-IXGH12N60CD1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IXGH12N60CD1 CAD Model

Description

The IXYS IXGH12N60CD1 is an IGBT type semiconductor device with a maximum current collector of 24A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Current Collector: 24A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 100W
  • Pulsed Collector Current: 48A
  • Mounting: through a hole
  • Package: TO-247AD (IXGH) dimension
  • Reverse Recovery Time (trr): 35ns
  • Gate Charge: 32nC
  • Operating Temperature: -55°C to 150°C (TJ)
  • Suitable for: use in power management, alternative energy, and industrial applications

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